Scientists at the University of Tokyo have demonstrated an experimental memory-switching device that operates in just 40 picoseconds while using remarkably little energy.
The device combines an antiferromagnetic material called manganese-tin (Mn₃Sn) with tantalum. Instead of relying mainly on heating to change its state, it uses a quantum-mechanical effect called spin-orbit torque to transfer angular momentum and switch between two magnetic states representing binary information.
Forty picoseconds is extraordinarily fast—about 40 trillionths of a second. The researchers also demonstrated switching with extremely low energy and reported endurance exceeding 100 billion switching operations in their experiments.
The technology is particularly interesting because ultrafast electronics normally face a major problem: faster switching can require more power, producing more heat. The Mn₃Sn device was designed to reduce that trade-off.
However, the claim that it could make entire computers “1,000 times faster” needs an important qualification. The demonstrated 40-picosecond switching is being compared with nanosecond-scale operation, but this is a memory or switching component—not a complete processor running 1,000 times faster.
The research is still at the laboratory stage. Scientists are now looking at integration, manufacturing and practical circuit requirements, with potential applications in future memory, high-speed computing and energy-efficient data-center technology.
If this approach can eventually be scaled into real computer hardware, it could help tackle one of modern computing’s biggest challenges: getting more performance without generating enormous amounts of heat.
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